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SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES Small package : VSC. Low forward voltage. Fast reverse recovery time. Small total capacitance.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10mS) Power Dissipation Junction Temperature
VRM VR IFM IO IFSM PD * Tj
85 80 300 100 2 100 150
Storage Temperature Range
Tstg -55 150
* : Mounted on a glass epoxy circuit board of 20 20mm, pad dimension of 4 4mm.
UNIT V V mA mA A mW
CE DF
KDS160V
SILICON EPITAXIAL PLANAR DIODE
CATHODE MARK
21
B DIM MILLIMETERS
A A 1.4 +_ 0.05 B 1.0 +_ 0.05 C 0.6 +_ 0.05 D 0.28 +_0.03 E 0.5 +_ 0.05 F 0.12 +_ 0.03
1. ANODE 2.
KDS160V Datasheet
