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SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES Small package : TFSC. Low forward voltage. Fast reverse recovery time. Small total capacitance. Suffix U : Qualified to AEC-Q101. ex) KDS160F-RTK/HU
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10mS) Power Dissipation Junction Temperature
VRM VR IFM IO IFSM PD * Tj
85 80 300 100 2 100 150
Storage Temperature Range
Tstg -55 150
* : Mounted on a glass epoxy circuit board of 20 20mm, pad dimension of 4 4mm.
UNIT V V mA mA A mW
4
KDS160F
SILICON EPITAXIAL PLANAR DIODE
CATHODE MARK
CE DF
B A
HG
DIM A B C D E F G H
MILLIMETERS 1.00+_ 0.05
0.80+0.10/-0.05 0.60+_ 0.05 0.30+_ 0.
KDS160F Datasheet
