KEC KDV1470
VARIABLE CAPACITANCE DIODE
| Part No. | KDV1470 |
|---|---|
| Datasheet | KDV1470 Download |
| Manufacturer |  KEC |
| Description | VARIABLE CAPACITANCE DIODE |
| Buy | Stock & Price |
FEATURES
High Capacitance Ratio : C1V/C5V=5.0(Min.) Excellent C-V Characteristics. Variations of Capacitance Values is Little. Small Package. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage Junction Temperature Storage Temperature Range VR Tj Tstg RATING 16 150 -55 150 UNIT V CLASSIFICATION OF CAPACITANCE RATIO GRADE GRADE CAPACITANCE (C1V) UNIT A 65.80 69.25 B 68.27 71.72 pF C 70.74 74.20 KDV1470 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE E L BL DIM MILLIMETERS A 2.93+_ 0.20 B 1.30+0.20/-0.15 A G H D 23 C 1.30 MAX D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 ~ 0.10 Q PP L 0.55 M 0.20 MIN N 1.00+0.20/-0.10 C N K J P7 Q 0.1 MAX M 1. ANODE 1 2. ANODE 2 3. CATHODE 3 21 SOT-23 Marking Grade S3Type Name Lot No.ELECTRICAL CHARACTERISTICS
(Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage Reverse Current Capacitance VR IR C1V C2V C3V C4.5V C5V Capacitance Ratio K Series Resistance rS TEST CONDITION IR=10 A VR=10V VR=1V, f=1MHz VR=2V, f=1MHz VR=3V, f=1MHz VR=4.5V, f=1MHz VR=5V, f=1MHz C1V/C5V, f=1MHz VR=1.5V, f=100MHz 2002.