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KDV1472 - VARIABLE CAPACITANCE DIODE

Features

  • High Capacitance Ratio : C1V/C5V=5.0(Min. ) Excellent C-V Characteristics. Variations of Capacitance Values is Little. Small Package. KDV1472.

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Datasheet Details

Part number KDV1472
Manufacturer KEC
File Size 600.09 KB
Description VARIABLE CAPACITANCE DIODE
Datasheet download datasheet KDV1472 Datasheet
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Full PDF Text Transcription

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SEMICONDUCTOR TECHNICAL DATA FM RADIO BAND TUNING APPLICATION. FEATURES High Capacitance Ratio : C1V/C5V=5.0(Min.) Excellent C-V Characteristics. Variations of Capacitance Values is Little. Small Package. KDV1472 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage Junction Temperature VR Tj Storage Temperature Range Tstg RATING 16 150 -55 150 UNIT V GRADE B C CAPACITANCE(CIV) 33.30~37.13 36.77~40.99 UNIT pF ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Reverse Voltage Reverse Current Capacitance VR IR C1V C4.5V IR=10 A VR=10V VR=1V, f=1MHz VR=4.5V, f=1MHz Capacitance Ratio K C1V/C5V, f=1MHz Series Resistance rS VR=1.5V, f=100MHz MIN. 16 - 30.16 6.2 5.0 - TYP. - 35.60 7.
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