KEC KDV1472
VARIABLE CAPACITANCE DIODE
| Part No. | KDV1472 |
|---|---|
| Datasheet | KDV1472 Download |
| Manufacturer |  KEC |
| Description | VARIABLE CAPACITANCE DIODE |
| Buy | Stock & Price |
FEATURES
High Capacitance Ratio : C1V/C5V=5.0(Min.) Excellent C-V Characteristics. Variations of Capacitance Values is Little. Small Package. KDV1472 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage Junction Temperature VR Tj Storage Temperature Range Tstg RATING 16 150 -55 150 UNIT V GRADE B C CAPACITANCE(CIV) 33.30~37.13 36.77~40.99 UNIT pFELECTRICAL CHARACTERISTICS
(Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Reverse Voltage Reverse Current Capacitance VR IR C1V C4.5V IR=10 A VR=10V VR=1V, f=1MHz VR=4.5V, f=1MHz Capacitance Ratio K C1V/C5V, f=1MHz Series Resistance rS VR=1.5V, f=100MHz MIN. 16 - 30.16 6.2 5.0 - TYP. - 35.60 7.7 0.8 MAX. 50 40.99 9.2 1.0 UNIT V nA pF 2008. 9. 11 Revision No : 4 1/2 KDV1472 2008 .9 11 Revision No : 4 2/2