KDV1471 Datasheet PDF

FEATURES

High Capacitance Ratio : C1V/C5V=5.0(Min.) Excellent C-V Characteristics. Variations of Capacitance Values is Little. Small Package. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage Junction Temperature VR Tj Storage Temperature Range Tstg RATING 16 150 -55 150 UNIT V GRADE B C CAPACITANCE(CIV) 33.30~37.13 36.77~40.99 UNIT pF A G H D KDV1471 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE E L BL 23 1 PP M 1. ANODE 2. NC 3. CATHODE DIM A B C D E G H J K L M N P MILLIMETERS 2.93+_ 0.20 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 3 21 SOT-23 C N K J

ELECTRICAL CHARACTERISTICS

(Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Reverse Voltage Reverse Current Capacitance Capacitance Ratio Series Resistance VR IR C1V C4.5V K rS IR=10 A VR=10V VR=1V, f=1MHz VR=4.5V, f=1MHz C1V/C5V, f=1MHz VR=1.5V, f=100MHz MIN. 16 - 30.16 6.2 5.0 - TYP. - 35.60 7.7 0.8 MAX. 50 40.99 9.2 1.0 UNIT V nA pF 2006.