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KDV215 - SILICON EPITAXIAL PLANAR DIODE

Key Features

  • High Capacitance Ratio : C2V/C25V=6.5(Typ. ) Low Series Resistance : rS=0.4 (Typ. ) Excellent C-V Characteristics, and Small Tracking Error. Useful for Small Size Tuner. 2 D KDV215.

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Datasheet Details

Part number KDV215
Manufacturer KEC
File Size 54.25 KB
Description SILICON EPITAXIAL PLANAR DIODE
Datasheet download datasheet KDV215 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMICONDUCTOR TECHNICAL DATA TV TUNING. FEATURES High Capacitance Ratio : C2V/C25V=6.5(Typ.) Low Series Resistance : rS=0.4 (Typ.) Excellent C-V Characteristics, and Small Tracking Error. Useful for Small Size Tuner. 2 D KDV215 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE CATHODE MARK B 1 G K A H E J C I MAXIMUM RATING (Ta=25 CHARACTERISTIC Reverse Voltage Peak Reverse Voltage Junction Temperature Storage Temperature Range ) SYMBOL VR VRM Tj Tstg RATING 30 35 (RL=10 125 -55 125 ) UNIT V V M M DIM A B C D E F G H I J K L M MILLIMETERS _ 0.1 2.50 + _ 0.05 1.25 + _ 0.05 0.90 + 0.30+0.06/-0.04 _ 0.05 1.70 + MIN 0.17 _ 0.03 0.126 + 0~0.1 1.0 MAX _ 0.05 0.15 + _ 0.05 0.4 + 2 +4/-2 4~6 1. ANODE 2.