• Part: KDV215
  • Description: SILICON EPITAXIAL PLANAR DIODE
  • Category: Diode
  • Manufacturer: KEC
  • Size: 54.25 KB
Download KDV215 Datasheet PDF
KEC
KDV215
KDV215 is SILICON EPITAXIAL PLANAR DIODE manufactured by KEC.
SEMICONDUCTOR TECHNICAL DATA TV TUNING. Features High Capacitance Ratio : C2V/C25V=6.5(Typ.) Low Series Resistance : r S=0.4 (Typ.) Excellent C-V Characteristics, and Small Tracking Error. Useful for Small Size Tuner. 2 D VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE CATHODE MARK B 1 MAXIMUM RATING (Ta=25 CHARACTERISTIC Reverse Voltage Peak Reverse Voltage Junction Temperature Storage Temperature Range ) SYMBOL VR VRM Tj Tstg RATING 30 35 (RL=10 125 -55 125 ) UNIT V V DIM A B C D E F G H I J K L M MILLIMETERS _ 0.1 2.50 + _ 0.05 1.25 + _ 0.05 0.90 + 0.30+0.06/-0.04 _ 0.05 1.70 + MIN 0.17 _ 0.03 0.126 + 0~0.1 1.0 MAX _ 0.05 0.15 + _ 0.05 0.4 + 2 +4/-2 4~6 1. ANODE 2. CATHODE Marking Type Name ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Reverse Current SYMBOL IR IR C2V C25V C2V/C25V r S VR=5V, f=470MHz VR=30V VR=30V, (Ta=60 ) VR=2V, f=1MHz VR=25V, f=1MHz ) TEST CONDITION MIN. 14.16 2.11 5.90 TYP. 6.50 0.4 MAX. 10 n A 100 16.25 p F 2.43 7.15 0.55 UNIT Capacitance Capacitance Ratio Series Resistance Note : Available in matched group for capacitance to 2.5%. C(Max.)-C(Min.) 0.025 C(Min.) (VR=2~25V) 2005. 12. 7 ..net Revision No : 0 1/2 - VR 100 rs - VR SERIES RESISTANCE rs (Ω) f=1MHz Ta=25...