KDV215E
KDV215E is SILICON EPITAXIAL PLANAR DIODE manufactured by KEC.
SEMICONDUCTOR
TECHNICAL DATA
TV TUNING.
Features
High Capacitance Ratio : C2V/C25V=6.5(Typ.) Low Series Resistance : r S=0.4 (Typ.) Excellent C-V Characteristics, and Small Tracking Error. Useful for Small Size Tuner.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage
Peak Reverse Voltage
Junction Temperature
Tj
Storage Temperature Range
Tstg
RATING 30
35(RL=10k ) 125
-55 125
UNIT V V
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE
CATHODE MARK B A
C 1
2 D
1. ANODE 2. CATHODE
DIM A B C D E F G
MILLIMETERS 1.60 +_0.10 1.20 +_0.10 0.80 +_0.10 0.30+_ 0.05 0.60+_ 0.10 0.13+_ 0.05 0.20+_ 0.10
Marking
Type Name
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL...
