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KDV216E - VARIABLE CAPACITANCE DIODE

Features

  • High Capacitance Ratio Low Series Resistance KDV216E.

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Datasheet Details

Part number KDV216E
Manufacturer KEC
File Size 353.51 KB
Description VARIABLE CAPACITANCE DIODE
Datasheet download datasheet KDV216E Datasheet
Additional preview pages of the KDV216E datasheet.

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Full PDF Text Transcription

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SEMICONDUCTOR TECHNICAL DATA TV TUNING. FEATURES High Capacitance Ratio Low Series Resistance KDV216E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE C 1 E CATHODE MARK B A GG MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage Junction Temperature VR Tj Storage Temperature Range Tstg RATING 32 125 -55 125 UNIT V 2 D 1. ANODE 2. CATHODE F DIM A B C D E F G MILLIMETERS 1.60 +_0.10 1.20 +_0.10 0.80 +_0.10 0.30+_ 0.05 0.60+_ 0.10 0.13+_ 0.05 0.20+_ 0.
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