GENERAL DESCRIPTION
KF2N60P FEATURES
VDSS= 600V, ID= 2A Drain-Source ON Resistance : RDS(ON)=4.4 Qg(typ) = 6.0nC (Max) @VGS = 10V MAXIMUM RATING (Ta=25 ) CHARACTERISTIC RATING SYMBOL KF2N60P KF2N60F UNIT Drain-Source Voltage VDSS 600 Gate-Source Voltage VGSS 30 @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) ID IDP EAS EAR dv/dt 2 2* 1.3 1.3* 4 4* 60 2.3 4.5 Drain Power Dissipation Tc=25 Derate above 25 PD 50 0.4 28.4 0.23 Maximum Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 Thermal Characteristics Thermal Resistance, Junction-to-Case RthJC 2.5 Thermal Resistance, Junction-toAmbient RthJA 62.5 * : Drain current limited by maximum junction temperature. 4.4 62.5 V V A mJ mJ V/ns W W/ /W /W PIN CONNECTION (KF2N60P, KF2N60F) D Q K A E I K M D NN F G B Q L J O C P H 123 1. GATE 2. DRAIN 3. SOURCE DIM A B C D E F G H I J K L M N O P Q MILLIMETERS 9.9 +_ 0.2 15.95...
KEC
