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KF2N60P - N-Channel MOSFET

General Description

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

It is mainly suitable for electronic ballast and switching mode power supplies.

Key Features

  • VDSS= 600V, ID= 2A Drain-Source ON Resistance : RDS(ON)=4.4 Qg(typ) = 6.0nC (Max) @VGS = 10V.

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Datasheet Details

Part number KF2N60P
Manufacturer KEC
File Size 412.09 KB
Description N-Channel MOSFET
Datasheet download datasheet KF2N60P Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMICONDUCTOR TECHNICAL DATA KF2N60P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF2N60P This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS= 600V, ID= 2A Drain-Source ON Resistance : RDS(ON)=4.4 Qg(typ) = 6.0nC (Max) @VGS = 10V MAXIMUM RATING (Ta=25 ) CHARACTERISTIC RATING SYMBOL KF2N60P KF2N60F UNIT Drain-Source Voltage VDSS 600 Gate-Source Voltage VGSS 30 @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) ID IDP EAS EAR dv/dt 2 2* 1.3 1.3* 4 4* 60 2.