GENERAL DESCRIPTION
FEATURES
VDSS= 600V, ID= 0.70A RDS(ON)=4.4 (Max) @VGS = 10V Qg(typ) = 6.0nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL Drain-Source Voltage VDSS Gate-Source Voltage VGSS TC=25 Drain Current TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) ID IDP EAS EAR dv/dt Drain Power Dissipation Tc=25 Derate above 25 Ta=25 PD Maximum Junction Temperature Tj Storage Temperature Range Thermal Characteristics Tstg Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-toAmbient RthJC RthJA RATING 600 30 0.70 0.44 4.0 60 1.5 4.5 5.4 0.043 1 150 -55 150 23 125 UNIT V V A mJ mJ V/ns W W/ W /W /W KF2N60L N CHANNEL MOS FIELD EFFECT TRANSISTOR +_ +_ +_ PIN CONNECTION 2013. 1. 14 Revision No : 0 1/6 KF2N60L ELECTRICAL CHARACTERISTICS
(Tc=25 ) CHARACTERISTIC Static Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain Cut-off Current Gate Threshold Voltage Gate Leakag...