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KF3N60D - N-CHANNEL MOS FIELD EFFECT TRANSISTOR

Download the KF3N60D datasheet PDF. This datasheet also covers the KF3N60I variant, as both devices belong to the same n-channel mos field effect transistor family and are provided as variant models within a single manufacturer datasheet.

Description

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

It is mainly suitable for electronic ballast and switching mode power supplies.

Features

  • VDSS= 600V, ID= 2.3A Drain-Source ON Resistance : RDS(ON)=3.3 Qg(typ) = 8.5nC @VGS = 10V.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (KF3N60I-KEC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number KF3N60D
Manufacturer KEC
File Size 82.51 KB
Description N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Datasheet download datasheet KF3N60D Datasheet

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Other Datasheets by KEC

Part Number Description
KF3N60F N-CHANNEL MOS FIELD EFFECT TRANSISTOR
KF3N60I N-CHANNEL MOS FIELD EFFECT TRANSISTOR
KF3N60P N-CHANNEL MOS FIELD EFFECT TRANSISTOR
KF3N40D N-CHANNEL MOS FIELD EFFECT TRANSISTOR
KF3N40I N-CHANNEL MOS FIELD EFFECT TRANSISTOR

Full PDF Text Transcription

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SEMICONDUCTOR TECHNICAL DATA KF3N60D/I N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS= 600V, ID= 2.3A Drain-Source ON Resistance : RDS(ON)=3.3 Qg(typ) = 8.5nC @VGS = 10V MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT KF3N60D A CD B H G FF J E K L N M DIM MILLIMETERS A 6.60 +_ 0.20 B 6.10 +_0.20 C 5.34 +_ 0.30 D 0.70 +_0.20 E 2.70 +_ 0.15 F 2.30 +_0.10 G 0.96 MAX H 0.90 MAX J 1.80 +_0.20 K 2.30 +_0.10 L 0.50 +_ 0.10 M 0.50 +_0.10 N 0.70 MIN 123 1. GATE 2. DRAIN 3.
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