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SEMICONDUCTOR
TECHNICAL DATA
KF3N60P/F
N CHANNEL MOS FIELD EFFECT TRANSISTOR
General Description
KF3N60P
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies.
FEATURES VDSS= 600V, ID= 3A Drain-Source ON Resistance : RDS(ON)=3.3 Qg(typ) = 8.5nC
@VGS = 10V
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
RATING
SYMBOL KF3N60P
KF3N60F
UNIT
Drain-Source Voltage
VDSS
600
Gate-Source Voltage
VGSS
30
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3)
ID
IDP EAS EAR dv/dt
3 3* 1.9 1.9* 7 7*
120
3.2
4.
KF3N60F Datasheet
