GENERAL DESCRIPTION
KF3N60P FEATURES
VDSS= 600V, ID= 3A Drain-Source ON Resistance : RDS(ON)=3.3 Qg(typ) = 8.5nC @VGS = 10V MAXIMUM RATING (Ta=25 ) CHARACTERISTIC RATING SYMBOL KF3N60P KF3N60F UNIT Drain-Source Voltage VDSS 600 Gate-Source Voltage VGSS 30 @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) ID IDP EAS EAR dv/dt 3 3* 1.9 1.9* 7 7* 120 3.2 4.5 Drain Power Dissipation Tc=25 Derate above 25 PD 73 0.58 31 0.25 Maximum Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 Thermal Characteristics Thermal Resistance, Junction-to-Case RthJC 1.7 Thermal Resistance, Junction-toAmbient RthJA 62.5 * : Drain current limited by maximum junction temperature. 4 62.5 V V A mJ mJ V/ns W W/ /W /W PIN CONNECTION (KF3N60P, KF3N60F) D Q K A E I K M D NN F G B Q L J O C P H 123 1. GATE 2. DRAIN 3. SOURCE DIM A B C D E F G H I J K L M N O P Q MILLIMETERS 9.9 +_ 0.2 15.95 MAX 1.3+...
KEC
