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KF3N60P - N-CHANNEL MOS FIELD EFFECT TRANSISTOR

Download the KF3N60P datasheet PDF. This datasheet also covers the KF3N60F variant, as both devices belong to the same n-channel mos field effect transistor family and are provided as variant models within a single manufacturer datasheet.

Description

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

It is mainly suitable for electronic ballast and switching mode power supplies.

Features

  • VDSS= 600V, ID= 3A Drain-Source ON Resistance : RDS(ON)=3.3 Qg(typ) = 8.5nC @VGS = 10V.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (KF3N60F-KEC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number KF3N60P
Manufacturer KEC
File Size 92.48 KB
Description N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Datasheet download datasheet KF3N60P Datasheet

Full PDF Text Transcription

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SEMICONDUCTOR TECHNICAL DATA KF3N60P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF3N60P This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS= 600V, ID= 3A Drain-Source ON Resistance : RDS(ON)=3.3 Qg(typ) = 8.5nC @VGS = 10V MAXIMUM RATING (Ta=25 ) CHARACTERISTIC RATING SYMBOL KF3N60P KF3N60F UNIT Drain-Source Voltage VDSS 600 Gate-Source Voltage VGSS 30 @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) ID IDP EAS EAR dv/dt 3 3* 1.9 1.9* 7 7* 120 3.2 4.
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