Datasheet Summary
SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for LED Lighting and switching mode power supplies. Features
VDSS(Min.)= 200V, ID= 3.6A Drain-Source ON Resistance : RDS(ON)=1.15 Qg(typ.) =2.9nC Vth(Max.)= 2V (max) @VGS =10V
KF4N20LD/I
N CHANNEL MOS FIELD EFFECT TRANSISTOR
DIM MILLIMETERS _ 0.20 A 6.60 + _ 0.20 6.10 + B _ 0.30 5.34 + C _ 0.20 D 0.70 + _ 0.15 E 2.70 + _ 0.10 2.30 + F 0.96 MAX G 0.90 MAX H _ 0.20 1.80 + J _ 0.10 K 2.30 + _ 0.50 + 0.10 L _ 0.10 M 0.50 +...