Datasheet Summary
SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for LED Lighting and switching mode power supplies. Features
VDSS(Min.)= 200V, ID= 1A Drain-Source ON Resistance : RDS(ON)=1.05 Qg(typ.) =2.9nC Vth(Max.)= 2V (max) @VGS =10V
N CHANNEL MOS FIELD EFFECT TRANSISTOR
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain...