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KF4N20LI - N-CHANNEL MOS FIELD EFFECT TRANSISTOR

This page provides the datasheet information for the KF4N20LI, a member of the KF4N20LD N-CHANNEL MOS FIELD EFFECT TRANSISTOR family.

Datasheet Summary

Description

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

It is mainly suitable for LED Lighting and switching mode power supplies.

Features

  • VDSS(Min. )= 200V, ID= 3.6A Drain-Source ON Resistance : RDS(ON)=1.15 Qg(typ. ) =2.9nC Vth(Max. )= 2V (max) @VGS =10V H G F F KF4N20LD/I N.

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Datasheet preview – KF4N20LI

Datasheet Details

Part number KF4N20LI
Manufacturer KEC
File Size 0.98 MB
Description N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Datasheet download datasheet KF4N20LI Datasheet
Additional preview pages of the KF4N20LI datasheet.

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Full PDF Text Transcription

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SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for LED Lighting and switching mode power supplies. FEATURES VDSS(Min.)= 200V, ID= 3.6A Drain-Source ON Resistance : RDS(ON)=1.15 Qg(typ.) =2.9nC Vth(Max.)= 2V (max) @VGS =10V H G F F KF4N20LD/I N CHANNEL MOS FIELD EFFECT TRANSISTOR KF4N20LD A C K D L B J E N M DIM MILLIMETERS _ 0.20 A 6.60 + _ 0.20 6.10 + B _ 0.30 5.34 + C _ 0.20 D 0.70 + _ 0.15 E 2.70 + _ 0.10 2.30 + F 0.96 MAX G 0.90 MAX H _ 0.20 1.80 + J _ 0.10 K 2.30 + _ 0.50 + 0.10 L _ 0.10 M 0.50 + 0.
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