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KF7N60P - N CHANNEL MOS FIELD EFFECT TRANSISTOR

Description

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

It is mainly suitable for active power factor correction and switching mode power supplies.

Features

  • VDSS=600V, ID=7A Drain-Source ON Resistance : RDS(ON)(Max)=1.2 @VGS=10V Qg(typ. )= 19nC.

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Datasheet Details

Part number KF7N60P
Manufacturer KEC Corporation
File Size 539.20 KB
Description N CHANNEL MOS FIELD EFFECT TRANSISTOR
Datasheet download datasheet KF7N60P Datasheet
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SEMICONDUCTOR TECHNICAL DATA KF7N60P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES VDSS=600V, ID=7A Drain-Source ON Resistance : RDS(ON)(Max)=1.2 @VGS=10V Qg(typ.)= 19nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC RATING SYMBOL KF7N60P KF7N60F Drain-Source Voltage VDSS 600 Gate-Source Voltage VGSS 30 @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) ID IDP EAS EAR dv/dt 7 7* 4 4* 20 20* 210 11 4.
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