This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.
It is mainly suitable for electronic ballast and switching mode power supplies.
Key Features
VDSS= 600V, ID= 1.0A Drain-Source ON Resistance : RDS(ON)=12 @VGS = 10V Qg(typ. ) = 5.9nC
K Q E H P F F L M O
DIM.
Full PDF Text Transcription for KHB1D0N60D (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
KHB1D0N60D. For precise diagrams, and layout, please refer to the original PDF.
SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and...
View more extracted text
s, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. KHB1D0N60D/I N CHANNEL MOS FIELD EFFECT TRANSISTOR www.DataSheet4U.com A C D I J B FEATURES VDSS= 600V, ID= 1.0A Drain-Source ON Resistance : RDS(ON)=12 @VGS = 10V Qg(typ.) = 5.9nC K Q E H P F F L M O DIM MILLIMETERS _ 0.2 6.6 + A _ 0.2 6.1 + B _ 0.3 5.34 + C _ 0.2 0.7 + D _ 0.2 2.7 + E _ 0.2 2.3 + F 0.96 MAX H _ 0.1 2.3 + I _ 0.1 0.5 + J 1.5 K _ 0.1 0.5 + L _ 0.1 M 0.8 + O 0.55 MIN _ 0.2 P 1.02 + _ 0.2 Q 0.8 + 1 2 3 1. GATE 2. DRAIN 3.
KHB1D0N60D Datasheet
