KHB1D0N60I Description
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. KHB1D0N60D/I N CHANNEL MOS FIELD EFFECT TRANSISTOR.
KHB1D0N60I Key Features
- Drain current limited by maximum junction temperature