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KHB1D0N60I - N-Channel MOSFET

Download the KHB1D0N60I datasheet PDF. This datasheet also covers the KHB1D0N60D variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

It is mainly suitable for electronic ballast and switching mode power supplies.

Key Features

  • VDSS= 600V, ID= 1.0A Drain-Source ON Resistance : RDS(ON)=12 @VGS = 10V Qg(typ. ) = 5.9nC K Q E H P F F L M O DIM.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (KHB1D0N60D_KEC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number KHB1D0N60I
Manufacturer KEC
File Size 86.47 KB
Description N-Channel MOSFET
Datasheet download datasheet KHB1D0N60I Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. KHB1D0N60D/I N CHANNEL MOS FIELD EFFECT TRANSISTOR www.DataSheet4U.com A C D I J B FEATURES VDSS= 600V, ID= 1.0A Drain-Source ON Resistance : RDS(ON)=12 @VGS = 10V Qg(typ.) = 5.9nC K Q E H P F F L M O DIM MILLIMETERS _ 0.2 6.6 + A _ 0.2 6.1 + B _ 0.3 5.34 + C _ 0.2 0.7 + D _ 0.2 2.7 + E _ 0.2 2.3 + F 0.96 MAX H _ 0.1 2.3 + I _ 0.1 0.5 + J 1.5 K _ 0.1 0.5 + L _ 0.1 M 0.8 + O 0.55 MIN _ 0.2 P 1.02 + _ 0.2 Q 0.8 + 1 2 3 1. GATE 2. DRAIN 3.