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SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction , electronic lamp ballasts based on half bridge topology and switching mode power supplies.
FEATURES VDSS= 75V, ID= 75A Drain-Source ON Resistance : RDS(ON)=0.017 @VGS = 10V Qg(typ.) = 85nC Improved dv/dt capacity, high Ruggedness Maximum Junction Temperature Range (175
)
KMB075N75P
N CHANNEL MOS FIELD EFFECT TRANSISTOR
A
E
I K
M
D NN
F G
B Q
L J
O C
P H
123
1. GATE 2. DRAIN 3. SOURCE
DIM A B C D E F G H I J K L M N O P Q
MILLIMETERS 9.9 +_ 0.2
15.95 MAX
1.3+0.1/-0.05 0.8+_ 0.1 3.6 +_ 0.2 2.8+_ 0.1 3.7
0.5+0.1/-0.05 1.
KMB075N75P Datasheet
