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KMB2D0N60SA - Trench MOSFET

Datasheet Summary

Description

This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

It is mainly suitable for portable equipment and SMPS.

Features

  • A H 2 G 1 3 VDSS=60V, ID=2A Drain-Source ON Resistance RDS(ON)=160m (Max. ) @ VGS=10V RDS(ON)=220m (Max. ) @ VGS=4.5V Super Hige Dense Cell Design P P DIM A B C D E G H J K L M N P.

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Datasheet preview – KMB2D0N60SA

Datasheet Details

Part number KMB2D0N60SA
Manufacturer KEC
File Size 498.08 KB
Description Trench MOSFET
Datasheet download datasheet KMB2D0N60SA Datasheet
Additional preview pages of the KMB2D0N60SA datasheet.

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www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA KMB2D0N60SA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment and SMPS. L E B L FEATURES A H 2 G 1 3 VDSS=60V, ID=2A Drain-Source ON Resistance RDS(ON)=160m (Max.) @ VGS=10V RDS(ON)=220m (Max.) @ VGS=4.5V Super Hige Dense Cell Design P P DIM A B C D E G H J K L M N P MILLIMETERS _ 0.20 2.93 + 1.30+0.20/-0.15 1.30 MAX 0.40+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.
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