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KMB3D0P30SA - Trench MOSFET

Datasheet Summary

Description

This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

It is mainly suitable for portable equipment and SMPS.

Features

  • A H 2 G 1 3 VDSS=-30V, ID=-3A Drain-Source ON Resistance RDS(ON)=80m (Max. ) @ VGS=-10V RDS(ON)=140m (Max. ) @ VGS=-4.5V Super Hige Dense Cell Design P P DIM A B C D E G H J K L M N P.

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Datasheet preview – KMB3D0P30SA

Datasheet Details

Part number KMB3D0P30SA
Manufacturer KEC
File Size 497.80 KB
Description Trench MOSFET
Datasheet download datasheet KMB3D0P30SA Datasheet
Additional preview pages of the KMB3D0P30SA datasheet.

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www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA KMB3D0P30SA P-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment and SMPS. L E B L FEATURES A H 2 G 1 3 VDSS=-30V, ID=-3A Drain-Source ON Resistance RDS(ON)=80m (Max.) @ VGS=-10V RDS(ON)=140m (Max.) @ VGS=-4.5V Super Hige Dense Cell Design P P DIM A B C D E G H J K L M N P MILLIMETERS _ 0.20 2.93 + 1.30+0.20/-0.15 1.30 MAX 0.40+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.
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