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KMB3D0P30SA - Trench MOSFET

General Description

This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

It is mainly suitable for portable equipment and SMPS.

Key Features

  • A H 2 G 1 3 VDSS=-30V, ID=-3A Drain-Source ON Resistance RDS(ON)=80m (Max. ) @ VGS=-10V RDS(ON)=140m (Max. ) @ VGS=-4.5V Super Hige Dense Cell Design P P DIM A B C D E G H J K L M N P.

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Datasheet Details

Part number KMB3D0P30SA
Manufacturer KEC
File Size 497.80 KB
Description Trench MOSFET
Datasheet download datasheet KMB3D0P30SA Datasheet

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Full PDF Text Transcription (Reference)

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www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA KMB3D0P30SA P-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment and SMPS. L E B L FEATURES A H 2 G 1 3 VDSS=-30V, ID=-3A Drain-Source ON Resistance RDS(ON)=80m (Max.) @ VGS=-10V RDS(ON)=140m (Max.) @ VGS=-4.5V Super Hige Dense Cell Design P P DIM A B C D E G H J K L M N P MILLIMETERS _ 0.20 2.93 + 1.30+0.20/-0.15 1.30 MAX 0.40+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.