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KMB3D5N40SA - N-Channel MOSFET

Datasheet Summary

Description

This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

It is mainly suitable for Load switch and Back-Light Inverter.

Features

  • VDSS=40V, ID=3.5A Drain-Source ON Resistance RDS(ON)=45m (Max. ) @ VGS=10V RDS(ON)=62m (Max. ) @ VGS=4.5V Super High Dense Cell Design KMB3D5N40SA N-Ch Trench MOSFET E L BL DIM.

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Datasheet preview – KMB3D5N40SA

Datasheet Details

Part number KMB3D5N40SA
Manufacturer KEC
File Size 54.83 KB
Description N-Channel MOSFET
Datasheet download datasheet KMB3D5N40SA Datasheet
Additional preview pages of the KMB3D5N40SA datasheet.

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Full PDF Text Transcription

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SEMICONDUCTOR TECHNICAL DATA General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for Load switch and Back-Light Inverter. FEATURES VDSS=40V, ID=3.5A Drain-Source ON Resistance RDS(ON)=45m (Max.) @ VGS=10V RDS(ON)=62m (Max.) @ VGS=4.5V Super High Dense Cell Design KMB3D5N40SA N-Ch Trench MOSFET E L BL DIM MILLIMETERS A 2.93+_ 0.20 B 1.30+0.20/-0.15 A G H D 23 C 1.30 MAX D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 Q K 0.00 ~ 0.10 PP L 0.55 M 0.20 MIN N 1.00+0.20/-0.10 C N K J P7 Q 0.
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