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SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.
B
KN2907/A
EPITAXIAL PLANAR PNP TRANSISTOR
C
FEATURES
: ICEX=-50nA(Max.) ; VCE=-30V, VEB=-0.5V. ᴌLow Saturation Voltage : VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15mA. ᴌComplementary to the KN2222/2222A.
K D E G N
A
ᴌLow Leakage Current
H
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC PC Tj Tstg -40 -5 -600 625 150 -55ᴕ150 RATING KN2907 KN2907A -60 -60 UNIT V V V mA mW ᴱ ᴱ
L
F
F
1
2
3
M
C
DIM A B C D E F G H J K L M N
MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 0.50 14.00 + 0.55 MAX 2.30 0.
KN2907 Datasheet
