Click to expand full text
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.
FEATURES Low Leakage Current : ICEX=-50nA(Max.) ; VCE=-30V, VEB=-0.5V. Low Saturation Voltage : VCE(sat)=-0.4V(Max.) ; IC=150mA, IB=-15mA. Complementary to the KN2222S/2222AS.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
RATING
SYMBOL
UNIT
KN2907S KN2907AS
Collector-Base Voltage
VCBO
-60
V
Collector-Emitter Voltage
VCEO
-40
-60 V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC -600 mA
Collector Power Dissipation (Ta=25 )
PC PC *
150 mW
350
Junction Temperature Tj 150
Storage Temperature Range
Tstg
-55 150
Note : * Package Mounted On 99.5% Alumina 10 8 0.6 )
KN2907S/AS
EPITAXIAL PLANAR PNP TRANSISTOR
E L BL
DIM MILLIMETERS A 2.93+_ 0.20
B 1.30+0.20/-0.15
A G H
D
23
C 1.
KN2907AS Datasheet
