GENERAL DESCRIPTION
FEATURES
hVDSS=600V, ID=11A hDrain-Source ON Resistance : RDS(ON)(Max)=0.38ʃ @VGS=10V hQg(typ.)= 20nC MAXIMUM RATING (Tc=25) CHARACTERISTIC SYMBOL RATING Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above 25 VDSS VGSS ID IDP EAS EAR dv/dt PD 600 30 11* 6.9* 24* 195 4.0 4.5 34.7 0.28 Maximum Junction Temperature Tj Storage Temperature Range Tstg Thermal Characteristics 150 -55q150 Thermal Resistance, Junction-to-Case RthJC 3.6 Thermal Resistance, Junction-to-Ambient RthJA 62.5 * : Drain current limited by maximum junction temperature. UNIT V V A mJ mJ V/ns W W/ /W /W Q A E K L M D NN 123 G F J B O C R H 1. GATE 2. DRAIN 3. SOURCE DIM MILLIMETERS A 10.16 +_ 0.2 B 15.87 +_ 0.2 C 2.54 +_ 0.2 D 0.8 +_ 0.1 E 3.18 +_ 0.1 F 3.3 +_ 0.1 G 12.57 +_ 0.2 H 0.5 +_ 0.1 J 13.0 +_ 0.5 K 3.23 +_ 0.1 L 1.47 MAX M 1.47 MAX N 2.54 +_ 0.2 O 6.68 +_ 0.2 Q 4.7 +_ 0.2 R 2.76 +_ 0.2 TO-220IS (1) PIN CONNECTION D G 2013.
KEC
