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KP11N60D - N-Channel MOSFET

General Description

This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

It is mainly suitable for active power factor correction and switching mode power supplies.

Key Features

  • VDSS=600V, ID=11A Drain-Source ON Resistance : G H KP11N60D N.

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Datasheet Details

Part number KP11N60D
Manufacturer KEC
File Size 405.41 KB
Description N-Channel MOSFET
Datasheet download datasheet KP11N60D Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMICONDUCTOR TECHNICAL DATA General Description This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES VDSS=600V, ID=11A Drain-Source ON Resistance : G H KP11N60D N CHANNEL MOS FIELD EFFECT TRANSISTOR A C K D L B J E N RDS(ON)(Max)=0.38 Qg(typ.)= 20nC @VGS=10V F F M DIM MILLIMETERS _ 0.20 A 6.60 + _ 0.20 6.10 + B _ 0.30 5.34 + C _ 0.20 D 0.70 + _ 0.15 E 2.70 + _ 0.10 2.30 + F 0.96 MAX G 0.90 MAX H _ 0.20 1.80 + J _ 0.10 2.30 + K _ 0.10 0.50 + L _ 0.10 M 0.50 + 0.70 MIN N 0.