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KP11N60F - N-Channel MOSFET

General Description

This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

Key Features

  • VDSS=600V, ID=11A Drain-Source ON Resistance : RDS(ON)(Max)=0.38 Qg(typ. )= 20nC @VGS=10V O B E G DIM.

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Datasheet Details

Part number KP11N60F
Manufacturer KEC
File Size 407.51 KB
Description N-Channel MOSFET
Datasheet download datasheet KP11N60F Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMICONDUCTOR TECHNICAL DATA General Description A KP11N60F N CHANNEL MOS FIELD EFFECT TRANSISTOR C F This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES VDSS=600V, ID=11A Drain-Source ON Resistance : RDS(ON)(Max)=0.38 Qg(typ.