GENERAL DESCRIPTION
A KP11N60F N CHANNEL MOS FIELD EFFECT TRANSISTOR C F FEATURES
VDSS=600V, ID=11A Drain-Source ON Resistance : RDS(ON)(Max)=0.38 Qg(typ.)= 20nC @VGS=10V O B E G DIM MILLIMETERS L M J R D N N MAXIMUM RATING (Tc=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 ) Q H SYMBOL VDSS VGSS ID RATING 600 30 11* 6.9* UNIT V V 1 2 3 1. GATE 2. DRAIN 3. SOURCE A B C D E F G H J K L M N O Q R _ 0.2 10.16 + _ 0.2 15.87 + _ 0.2 2.54 + _ 0.1 0.8 + _ 0.1 3.18 + _ 0.1 3.3 + _ 0.2 12.57 + _ 0.1 0.5 + _ 0.5 13.0 + _ 0.1 3.23 + 1.47 MAX 1.47 MAX _ 0.2 2.54 + _ 0.2 6.68 + _ 0.2 4.7 + _ 0.2 2.76 + K TO-220IS (1) A IDP EAS EAR dv/dt PD 24* 195 4.0 4.5 34.7 0.28 mJ mJ V/ns W W/ Derate above 25 Tj Tstg Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Thermal Resistance, Ju...
KEC
