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SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
FEATURE ᴌHigh Breakdown Voltage and High Current
: VCEO=-80V, IC=-1A. ᴌLow VCE(sat) ᴌComplementary to KTD1863.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range
VCBO VCEO VEBO
IC IE PC Tj Tstg
RATING -80 -80 -5 -1 1 1 150
-55ᴕ150
UNIT V V V A A W ᴱ ᴱ
O D
KTB1241
EPITAXIAL PLANAR PNP TRANSISTOR
BD
G JA R
P DEPTH:0.2
C
Q K
FF
HH M EM
123
HL
NN 1. EMITTER 2. COLLECTOR 3. BASE
DIM MILLIMETERS
A 7.20 MAX
B 5.20 MAX
S C 0.60 MAX D 2.50 MAX
E 1.15 MAX
F 1.27
G 1.70 MAX
H 0.55 MAX J 14.00+_ 0.50
H
K L
0.35 MIN 0.75+_ 0.10
M4
N 25
O 1.
KTB1241 Datasheet
