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J B
EQ
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
FEATURES 1W (Mounted on Ceramic Substrate). Small Flat Package. Complementary to KTD1898.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current
Collector Power Dissipation
Junction Temperature
VCBO VCEO VEBO
IC IE PC PC* Tj
Storage Temperature Range
Tstg
* Mounted on ceramic substrate(250mm2 0.8t)
RATING -80 -80 -5 -1 1 500 1 150
-55 150
UNIT V V V A A mW W
KTB1260
EPITAXIAL PLANAR PNP TRANSISTOR
AC H
G
DD K
FF
1 23
DIM A B C D E F G H J K
MILLIMETERS 4.70 MAX 2.50 +_0.20 1.70 MAX
0.45+0.15/-0.10 4.25 MAX 1.50+_ 0.10 0.40 TYP 1.75 MAX 0.75 MIN
0.5+0.10/-0.05
1. BASE 2. COLLECTOR (HEAT SINK) 3.