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SEMICONDUCTOR
TECHNICAL DATA
HIGH VOLTAGE APPLICATION.
FEATURES High Transition Frequency : fT=100MHz(Typ.). Complementary to KTA1225D/L.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current
VCBO VCEO VEBO
IC IB
Collector Power Dissipation
Ta=25 Tc=25
PC
Junction Temperature
Tj
Storage Temperature Range
Tstg
RATING 160 160 5 1.5 1.0 1.0 10 150
-55 150
UNIT V V V A A
W
Q
KTC2983D/L
EPITAXIAL PLANAR NPN TRANSISTOR
A C
H FF
123 1. BASE 2. COLLECTOR 3. EMITTER
K E
BD
M
I J
P L
O
DIM A B C D E F H I J K L M O P Q
MILLIMETERS 6.60 +_ 0.2 6.10 +_ 0.2 5.0 +_0.2 1.10+_ 0.2 2.70+_ 0.2 2.30+_ 0.1
1.00 MAX 2.30+_ 0.2 0.5+_ 0.1 2.00 +_0.20 0.50+_ 0.10 0.91+_ 0.10 0.90+_ 0.1 1.00+_ 0.
KTC2983D Datasheet
