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SEMICONDUCTOR
TECHNICAL DATA
HIGH FREQUENCY APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION.
FEATURE High Power Gain : Gpe=29dB(Typ.) (f=10.7MHz)
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature
VCBO VCEO VEBO
IC IE PC Tj
Storage Temperature Range
Tstg
RATING 35 30 4 50 -50 100 150
-55 150
UNIT V V V mA mA mW
A J G
KTC4079
EPITAXIAL PLANAR NPN TRANSISTOR
C L
E
MB
M
DIM MILLIMETERS
2
DA B
2.00+_ 0.20 1.25 +_ 0.15
13
C 0.90 +_ 0.10 D 0.3+0.10/-0.05
E 2.10 +_ 0.20
G 0.65
H 0.15+0.1/-0.06
NK
J 1.30
K 0.00-0.10
L 0.70 H M 0.42+_ 0.10
N 0.10 MIN N
1. EMITTER 2. BASE 3.
KTC4079 Datasheet
