High DC Current Gain and Excellent hFE Linearity : hFE(1)=140 600(VCE=1V, IC=0.5A) : hFE(2)=70(Min. ), 140(Typ. ) (VCE=1V, IC=2A). Low Saturation Voltage : VCE(sat)=0.5V(Max. ) (IC=2A, IB=50mA). Small Flat Package. 1W (Mounted on Ceramic Substrate).
Full PDF Text Transcription for KTC4377 (Reference)
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SEMICONDUCTOR TECHNICAL DATA KTC4377 EPITAXIAL PLANAR NPN TRANSISTOR STROBO FLASH APPLICATION. HIGH CURRENT APPLICATION. FEATURES High DC Current Gain and Excellent hFE L...
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CURRENT APPLICATION. FEATURES High DC Current Gain and Excellent hFE Linearity : hFE(1)=140 600(VCE=1V, IC=0.5A) : hFE(2)=70(Min.), 140(Typ.) (VCE=1V, IC=2A). Low Saturation Voltage : VCE(sat)=0.5V(Max.) (IC=2A, IB=50mA). Small Flat Package. 1W (Mounted on Ceramic Substrate). MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse (Note 1) Base Current DC Pulse (Note 1) Collector Power Dissipation Junction Temperature VCBO VCES VCEO VEBO IC ICP IB IBP PC PC* Tj 30 30 10 6 2 4 0.4 0.
KTC4377 Datasheet
