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KTC4377 - Epitaxial Planar NPN Transistor

Key Features

  • s.
  • Collector Power Dissipation: PC=500mW.
  • Collector Current: IC=2A SOT-89 4.50±0.1 1.80±0.1 123 0.48±0.1 0.53±0.1 2.50±0.1 4.00±0.1 Unit:mm 1.50 ±0.1 0.44±0.1 0.80±0.1 2.60±0.1 0.40±0.1 3.00±0.1 1.Base 2.Collector 3.Emitter.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Collector-base voltage Collector-Emitter voltage Emitter-base voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC PC Tj Tstg Rati.

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SMD Type Transistors Epitaxial Planar NPN Transistor KTC4377 ■ Features ● Collector Power Dissipation: PC=500mW ● Collector Current: IC=2A SOT-89 4.50±0.1 1.80±0.1 123 0.48±0.1 0.53±0.1 2.50±0.1 4.00±0.1 Unit:mm 1.50 ±0.1 0.44±0.1 0.80±0.1 2.60±0.1 0.40±0.1 3.00±0.1 1.Base 2.Collector 3.