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SEMICONDUCTOR
TECHNICAL DATA
KTC4666
EPITAXIAL PLANAR NPN TRANSISTOR
LOW NOISE AMPLIFIER APPLICATION.
FEATURE High hFE : hFE=600 3600. Noise Figure : 0.5dB(Typ.) at f=100kHz.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range
VCBO VCEO VEBO
IC IB PC Tj Tstg
60 50 8 150 30 200 150 -55 150
* Package mounted on 99.5% alumina 10mm 8mm 0.6mm
UNIT V V V mA mA mW
A J G
E
MBM
DIM MILLIMETERS
DA
2.00+_ 0.20
2 B 1.25+_ 0.15
13
C 0.90+_ 0.10 D 0.3+0.10/-0.05
E 2.10 +_ 0.20
G 0.65 P H 0.15+0.1/-0.06
J 1.30
K 0.00~0.10
C L
L HM
0.70 0.42 +_0.10
NK
N
N 0.10 MIN P 0.1 MAX
1. EMITTER 2. BASE 3.
KTC4666 Datasheet
