KEC KTD1691
EPITAXIAL PLANAR NPN TRANSISTOR
| Part No. | KTD1691 |
|---|---|
| Datasheet | KTD1691 Download |
| Manufacturer |  KEC |
| Description | EPITAXIAL PLANAR NPN TRANSISTOR |
| Buy | Stock & Price |
FEATURES
High Power Dissipation : PC=1.5W(Ta=25 Complementary to KTB1151. ) MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse * Base Current VCBO VCEO VEBO IC ICP IB Collector Power Dissipation Ta=25 Tc=25 PC Junction Temperature Tj Storage Temperature Range Tstg * PW 10ms, Duty Cycle 50% RATING 60 60 7 5 8 1 1.5 20 150 -55 150 UNIT V V V A A W KTD1691 EPITAXIAL PLANAR NPN TRANSISTOR A B C H J K D E F G L M N O P 12 3 1. EMITTER 2. COLLECTOR 3. BASE DIM A B C D E F G H J K L M N O P MILLIMETERS 8.3 MAX 5.8 0.7 Φ3.2+_ 0.1 3.5 11.0 +_ 0.3 2.9 MAX 1.0 MAX 1.9 MAX 0.75 +_ 0.15 15.50+_ 0.5 2.3 +_ 0.1 0.65 +_ 0.15 1.6 3.4 MAX TO-126ELECTRICAL CHARACTERISTICS
(Ta=25 ) CHARACTERISTIC SYMBOL Collector Cut-off Current Emitter Cut-off Current DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage * ICBO IEBO hFE 1 hFE2 (Note) hFE 3 VCE(sat) VBE(sat) TEST CONDITION VCB=50...
