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KTD1028 - EPITAXIAL PLANAR NPN TRANSISTOR

Key Features

  • High DC Current Gain : hFE=800 3200 (VCE=5.0V, IC=300mA). Wide Area of Safe Operation. Low Collector Saturation Voltage. : VCE(sat)=0.17V (IC=500mA, IB=5.0mA). KTD1028.

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Datasheet Details

Part number KTD1028
Manufacturer KEC
File Size 306.57 KB
Description EPITAXIAL PLANAR NPN TRANSISTOR
Datasheet download datasheet KTD1028 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMICONDUCTOR TECHNICAL DATA HIGH CURRENT APPLICATION. FEATURES High DC Current Gain : hFE=800 3200 (VCE=5.0V, IC=300mA). Wide Area of Safe Operation. Low Collector Saturation Voltage. : VCE(sat)=0.17V (IC=500mA, IB=5.0mA). KTD1028 EPITAXIAL PLANAR NPN TRANSISTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC IB PC Tj Tstg RATING 60 50 8 1.0 200 1 150 -55 150 UNIT V V V A mA W ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current ICBO VCB=60V, IE=0 Emitter Cut-off Current IEBO VEB=8V, IC=0 DC Current Gain hFE(1) (Note) hFE(2) VCE=5.