The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
SEMICONDUCTOR
TECHNICAL DATA
HIGH POWER AMPLIFIER APPLICATION.
FEATURES Complementary to KTB817B. Recommended for 60W Audio Frequency Amplifier Output Stage.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC Pulse
Collector Power Dissipation (Tc=25 )
Junction Temperature
Storage Temperature Range
SYMBOL VCBO VCEO VEBO IC ICP PC Tj Tstg
RATING 160 140 6 12 15 100 150
-55 150
UNIT V V V
A
W
H
KTD1047B
TRIPLE DIFFUSED NPN TRANSISTOR
A NQ O
D E d
PP
123 1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER
G L
IF C J
R
B
K
DIM MILLIMETERS A 15.60 +_ 0.20 B 4.80 +_ 0.20 C 19.90 +_ 0.20 D 2.00 +_ 0.20 d 1.00 +_ 0.20 E 3.00 +_ 0.20 F 3.80 +_ 0.20 G 3.50 +_ 0.20
H 13.90 +_ 0.20 I 12.76 +_ 0.20 J 23.40 +_ 0.
KTD1047B Datasheet
