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KTD1003 - EPITAXIAL PLANAR NPN TRANSISTOR

Key Features

  • ᴌHigh DC Current Gain : hFE=800ᴕ3200. (VCE=5.0V, IC=300mA). ᴌWide Area of Safe Operation. ᴌLow Collector Saturation Voltage : VCE(sat)=0.17V (IC=500mA, IB=5.0mA).

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Datasheet Details

Part number KTD1003
Manufacturer KEC
File Size 73.34 KB
Description EPITAXIAL PLANAR NPN TRANSISTOR
Datasheet download datasheet KTD1003 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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J BL E SEMICONDUCTOR TECHNICAL DATA HIGH CURRENT APPLICATION. FEATURES ᴌHigh DC Current Gain : hFE=800ᴕ3200. (VCE=5.0V, IC=300mA). ᴌWide Area of Safe Operation. ᴌLow Collector Saturation Voltage : VCE(sat)=0.17V (IC=500mA, IB=5.0mA). MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage VCBO 60 Collector-Emitter Voltage VCEO 50 Emitter-Base Voltage VEBO 8 Collector Current IC 1.0 Collector Power Dissipation PC 500 PC * 1 Junction Temperature Tj 150 Storage Temperature Range Tstg -55ᴕ150 PC* : KTD1003 Mounted on Ceramic Substrate (250mm2x0.8t) UNIT V V V A mW W ᴱ ᴱ KTD1003 EPITAXIAL PLANAR NPN TRANSISTOR AC H G DD K FF 1 23 DIM A B C D E F G H J K MILLIMETERS 4.70 MAX 2.50 +_0.20 1.70 MAX 0.45+0.15/-0.10 4.25 MAX 1.50+_ 0.10 0.40 TYP 1.