Datasheet Summary
BL E
SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION.
Features
ᴌHigh DC Current Gain
: hFE=800ᴕ3200. (VCE=5.0V, IC=300mA). ᴌWide Area of Safe Operation. ᴌLow Collector Saturation Voltage
: VCE(sat)=0.17V (IC=500mA, IB=5.0mA).
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current
IC 1.0
Collector Power Dissipation
PC 500 PC
- 1
Junction Temperature
Tj 150
Storage Temperature Range
Tstg -55ᴕ150
PC- : KTD1003 Mounted on Ceramic Substrate (250mm2x0.8t)
UNIT V V V A mW W ᴱ ᴱ
EPITAXIAL PLANAR NPN...