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KTD1145 - EPITAXIAL PLANAR NPN TRANSISTOR

Key Features

  • ᴌLow Saturation Voltage. : VCE(sat)=0.5V(Max. ) (IC=3A, IB=60mA). ᴌHigh Collector Current. : IC=5A, ICP(Peak Current )=8A. ᴌWide ASO.

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Datasheet Details

Part number KTD1145
Manufacturer KEC
File Size 73.62 KB
Description EPITAXIAL PLANAR NPN TRANSISTOR
Datasheet download datasheet KTD1145 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMICONDUCTOR TECHNICAL DATA RELAY DRIVE, HAMMER DIRVE, LAMP DRIVE. STROBO, DC-DC CONVERTER, MOTOR DRIVE. FEATURES ᴌLow Saturation Voltage. : VCE(sat)=0.5V(Max.) (IC=3A, IB=60mA). ᴌHigh Collector Current. : IC=5A, ICP(Peak Current )=8A. ᴌWide ASO. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse (Note1) Collector Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC ICP PC Tj Tstg Note 1: Pulse Width⏊100mS, Duty Cycle⏊30% RATING 60 20 6 5 8 1 150 -55ᴕ150 UNIT V V V A W ᴱ ᴱ O D KTD1145 EPITAXIAL PLANAR NPN TRANSISTOR BD G JA R P DEPTH:0.2 C Q K FF HH M EM 123 HL NN 1. EMITTER 2. COLLECTOR 3. BASE DIM MILLIMETERS A 7.20 MAX B 5.20 MAX S C 0.