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SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION CAMERA STROBO (For Electronic Flash Unit)
FEATURES ᴌLow VCE(SAT). ᴌHigh Performance at Low Supply Voltage.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC Pulse (Note1)
Collector Power Dissipation
Junction Temperature
VCBO VCEO VEBO
IC ICP PC Tj
Storage Temperature Range
Tstg
Note 1: Pulse Width⏊100mS, Duty Cycle⏊30%
RATING 40 20 7 5 8 625 150
-55ᴕ150
UNIT V V V
A
mW ᴱ ᴱ
L M
C
KTD1146
EPITAXIAL PLANAR NPN TRANSISTOR
BC
JA
K
E G
D
H
FF
1 23
N DIM MILLIMETERS A 4.70 MAX B 4.80 MAX C 3.70 MAX D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 J 14.00 +_0.50 K 0.55 MAX L 2.30 M 0.45 MAX N 1.00
1. EMITTER 2. COLLECTOR 3.
KTD1146 Datasheet
