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SEMICONDUCTOR
TECHNICAL DATA
KTD2066
EPITAXIAL PLANAR NPN TRANSISTOR
HIGH CURRENT SWITCHING APPLICATION. LAMP SOLENOID DRIVER APPLICATION.
FEATURES High DC Current Gain : hFE=500 1500(IC=1A). Low Collector Saturation Voltage : VCE(sat)=0.35V(Max.) (IC=3A).
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage
VCBO VCEO
Emitter-Base Voltage
VEBO
Collector Current
DC Pulse
IC ICP
Base Current
IB
Collector Power Dissipation
Ta=25 Tc=25
PC
Junction Temperature
Tj
Storage Temperature Range
Tstg
RATING 100 80 7 5 8 1 2 30 150
-55 150
UNIT V V V
A
A
W
K
A S
E
LL M
DD
NN
J
GF B P
C
DIM MILLIMETERS
A 10.0+_ 0.3
B 15.0+_ 0.3
C 2.70 +_ 0.3
D 0.76+0.09/-0.05
E Φ3.2 +_ 0.2 F 3.0+_ 0.3
G 12.0+_ 0.3
H 0.5+0.1/-0.05
J 13.6 +_ 0.
KTD2066 Datasheet
