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KU310N10D - N-Channel MOSFET

Datasheet Summary

Description

This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

Features

  • VDSS= 100V, ID= 27A Drain-Source ON Resistance : RDS(ON)=31m (Max. ) @VGS = 10V.

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Datasheet Details

Part number KU310N10D
Manufacturer KEC
File Size 1.03 MB
Description N-Channel MOSFET
Datasheet download datasheet KU310N10D Datasheet
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Full PDF Text Transcription

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SEMICONDUCTOR TECHNICAL DATA General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter, Synchronous Rectification and a load switch in battery powered applications FEATURES VDSS= 100V, ID= 27A Drain-Source ON Resistance : RDS(ON)=31m (Max.) @VGS = 10V MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL RATING Drain-Source Voltage Gate-Source Voltage VDSS VGSS 100 20 @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above 25 ID IDP EAS EAR dv/dt PD 27 17 110* 60 2.3 4.5 52 0.
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