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KU310N10P - N-Channel MOSFET

Datasheet Summary

Description

This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

Features

  • VDSS= 100V, ID= 34A Drain-Source ON Resistance : RDS(ON)=31m (Max. ) @VGS = 10V.

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Datasheet Details

Part number KU310N10P
Manufacturer KEC
File Size 1.25 MB
Description N-Channel MOSFET
Datasheet download datasheet KU310N10P Datasheet
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Full PDF Text Transcription

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SEMICONDUCTOR TECHNICAL DATA General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter, Synchronous Rectification and a load switch in battery powered applications FEATURES VDSS= 100V, ID= 34A Drain-Source ON Resistance : RDS(ON)=31m (Max.
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