Datasheet4U Logo Datasheet4U.com

KU3600N10W - N-Channel MOSFET

Datasheet Summary

Description

This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

It is mainly suitable for LED Lighting and DC/DC Converters.

Features

  • VDSS(Min. )= 100V, ID= 1.7A Drain-Source ON Resistance : RDS(ON)=0.36 Qg(typ. ) =4.2nC (max) @VGS =10V.

📥 Download Datasheet

Datasheet preview – KU3600N10W

Datasheet Details

Part number KU3600N10W
Manufacturer KEC
File Size 599.24 KB
Description N-Channel MOSFET
Datasheet download datasheet KU3600N10W Datasheet
Additional preview pages of the KU3600N10W datasheet.

📁 Similar Datasheet

  • KU305 - (KU305 - KU308) OptoSwitch (Stanley Electric)
  • KU306 - (KU305 - KU308) OptoSwitch (Stanley Electric)
  • KU307 - (KU305 - KU308) OptoSwitch (Stanley Electric)
  • KU308 - (KU305 - KU308) OptoSwitch (Stanley Electric)
  • KU3521S28 - Potentiometer (NTE Electronics)
  • KU3521S64 - Potentiometer (NTE Electronics)
  • KU3531S28 - Potentiometer (NTE Electronics)
  • KU386 - SX MICROPROCESSOR (Intel Corporation)
Other Datasheets by KEC

Full PDF Text Transcription

Click to expand full text
SEMICONDUCTOR TECHNICAL DATA General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for LED Lighting and DC/DC Converters. FEATURES VDSS(Min.)= 100V, ID= 1.7A Drain-Source ON Resistance : RDS(ON)=0.36 Qg(typ.) =4.2nC (max) @VGS =10V MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL RATING Drain-Source Voltage VDSS 100 Gate-Source Voltage VGSS 20 @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation TA=25 Derate above25 ID IDP EAS EAR dv/dt PD 1.7* 1.0* 6.4* 12.4 0.1 4.5 2.0* 0.
Published: |