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KU3600N10W - N-Channel MOSFET

General Description

This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

It is mainly suitable for LED Lighting and DC/DC Converters.

Key Features

  • VDSS(Min. )= 100V, ID= 1.7A Drain-Source ON Resistance : RDS(ON)=0.36 Qg(typ. ) =4.2nC (max) @VGS =10V.

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Datasheet Details

Part number KU3600N10W
Manufacturer KEC
File Size 599.24 KB
Description N-Channel MOSFET
Datasheet download datasheet KU3600N10W Datasheet

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Full PDF Text Transcription (Reference)

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SEMICONDUCTOR TECHNICAL DATA General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for LED Lighting and DC/DC Converters. FEATURES VDSS(Min.)= 100V, ID= 1.7A Drain-Source ON Resistance : RDS(ON)=0.36 Qg(typ.) =4.2nC (max) @VGS =10V MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL RATING Drain-Source Voltage VDSS 100 Gate-Source Voltage VGSS 20 @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation TA=25 Derate above25 ID IDP EAS EAR dv/dt PD 1.7* 1.0* 6.4* 12.4 0.1 4.5 2.0* 0.