KEC MMBTA13
EPITAXIAL PLANAR NPN TRANSISTOR
ELECTRICAL CHARACTERISTICS
(Ta=25 ) CHARACTERISTIC SYMBOL Collector-Emitter Breakdown Voltage Emitter Cut-off Current Emitter Cut-off Current MMBTA13 DC Current Gain MMBTA14 MMBTA13 VCES ICBO IEBO hFE * MMBTA14 Collector-Emitter Saturation Voltage VCE(sat) Base-Emitter Voltage VBE Current Gain Bandwith Product fT *Pulse Test : Pulse Width 300 S, Duty Cycle 2.0% TEST CONDITION IC=0.1mA VCB=30V VEB=10V IC=10mA, VCE=5V IC=100mA, VCE=5V IC=100mA, IB=0.1mA IC=100mA, VCE=5V IC=10mA, f=100MHz, VCE=5V MIN. 30 - 5,000 10,000 10,000 20,000 125 TYP. - MAX. - 100 100 1.5 2.0 - UNIT V nA nA - V V MHz MARK SPEC TYPE MARK MMBTA13 AIX MMBTA14 AHX Marking A XType Name Lot No. 1999. 11. 30 Revision No : 4 1/2 DC CURRENT GAIN hFE MMBTA13/14 200K 100K 50K 30K h FE - I C VCE =5V 10K 5K 3K 1 3 10 30 100 300 COLLECTOR CURRENT I C (A) 1K TRANSITION FREQUENCY f T (MHz) f T - IC 500 VCE =5V 300 100 50 30 1 3 5 10 30 50 COLLECTOR CURRENT I C (mA) 100 VBE (sat), VCE (sat) - IC 5 I C =1000I B 3 1 0.5 0.3 0.2 5 VBE...