SJMN088R65W Datasheet | Kodenshi AUK Group

SJMN0 8 8 R6 5 W Super Junction MOSFET N-Channel Super Junction MOSFET Fe at ur e s - Drain-Source volt age: VDS=700V (@TJ=150°C) - Low drain-source On resist ance: RDS(on)=0. 088Ω (Max. ) - Ult ra low gat e charge: Qg=76n C(Typ. ) - Ro HS pl iant device - 100%avalanche t est ed Ordering Information Part Number Marking Package SJMN0 8 8 R6 5 W N0 8 8 R6 5 TO- 2 4 7 TO-247 Marking Information AUK △YMDD N088R65 Column 1: Manufacturer Column 2: Production Information e. g. ) △YMDD -. △: Factory Management Code -. YMDD: Date Code (Year, Month, Daily) Column 3: Device Code Absolut e maximum rat ings (TC=25°C unless otherwise noted) Charact e r ist i c Symbol Drain-source volt age Gat e-source volt age Drain curr ent (DC) (Not e 1) Drain curr ent (Pulsed) (Note 1) Single pulsed avalanche energy (Note 2) Repet it ive avalanche cur rent (Note 1) Repet it ive avalanche energy (Not e 1) Power dissipat ion Diode dv/ dt ruggedness (Not e 3) VDSS VGSS Tc=25°C ID Tc=100°C IDM EAS IAR EAR PD dv/ dt MOSFET dv/ dt ruggedness (Not e 4) dv/ dt Junct ion t emperat ure St orage t emperat ure range Tst g Rat ing 650 ±30 40 25 160 720 12 2. 3 230 4. 5 50 150 -55~150 Unit V V A A A m J A m J...