SJMN600R70F
SJMN600R70F is N-Channel Super Junction MOSFET manufactured by Kodenshi AUK Group.
Features
- Drain-Source voltage: VDS=750V (@TJ=150C)
- Low drain-source On resistance: RDS(on)=0.6Ω (Max.)
- Ultra low gate charge: Qg=13.5n C(Typ.)
- Ro HS pliant device
- 100% avalanche tested
Ordering Information
Part Number
Marking
Package
N600R70
TO-220F-3L
TO-220F-3L
Marking Information
AAUUK K ◎△ΔYYMMDDDD N600R70 SDB20D45
Column 1: Manufacturer Column 2: Production Information e.g.) ◎△YMDD
-. ◎△: Factory Management Code -. YMDD: Date Code (Year, Month, Daily) Column 3: Device Code
Absolute maximum ratings (TC=25C unless otherwise noted)
Characteristic
Symbol
Drain-source voltage Gate-source voltage
Drain current (DC) (Note 1)
Drain current (Pulsed) (Note 1) Single pulsed avalanche energy (Note 2) Repetitive avalanche current (Note 1) Repetitive avalanche energy (Note 1) Power dissipation Junction temperature Storage temperature range
VDSS VGSS
Tc=25C ID
Tc=100C IDM EAS IAR EAR PD TJ Tstg
- Limited only maximum junction temperature
Rating 700 30 7 4.4 28 158 7 3.2 32 150
-55~150
Unit V V A A A m J A m J W C C
Rev. date: 21-JUN-18
KSD-T0O279-000
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Thermal Characteristics
Characteristic Thermal resistance, junction to case Thermal resistance, junction to ambient
Symbol Rth(j-c) Rth(j-a)
Rating Max. 3.9 Max. 62.5
Unit C/W
Electrical Characteristics (TC=25C unless otherwise...