SJMN65R38D Datasheet | Kodenshi AUK Group

SJMN6 5 R3 8 D Super Junction MOSFET N-Channel Super Junction MOSFET Fe at ur e s - Drain-Source volt age: VDS=700V (@TJ=150°C) - Low drain-source On resist ance: RDS(on)=0. 34Ω (Typ. ) - Ult ra low gat e charge: Qg=28n C(Typ. ) - Ro HS pl iant device - 100%avalanche t est ed Ordering Information Part Number Marking Package SJMN6 5 R3 8 D SJMN6 5 R3 8 TO- 2 2 0 F- 3 L TO-252 Marking Information SJMN 6 5 R3 8 YWWN Column 1, 2: Device Code Column 3: Production Information e. g. ) YWWN -. YWW: Date Code (year, week) -. N: Management Code Absolut e maximum rat ings (TC=25°C unless otherwise noted) Charact e r ist i c Symbol Drain-source volt age Gat e-source volt age Drain curr ent (DC) (Not e 1) Drain curr ent (Pulsed) (Note 1) Single pulsed avalanche energy (Note 2) Power dissipat ion Junct ion t emperat ure St orage t emperat ure range VDSS VGSS Tc=25°C ID Tc=100°C IDM EAS PD TJ Tst g - Limit ed only maximum j unct ion t emperat ure Rat ing 650 ±30 11 7 30 346 76 150 -55~150 Unit V V A A A m J W °C °C Rev. dat e: 12-JUL-17 KSD- T 6 O1 0 5 - 0 0 0 . auk. co. kr 1 of 8 Thermal Characteristics Charact e r ist i c Thermal resist ance, j unct i on t o case Thermal resist ance, j unct i on t o...